FDMC610P - MOSFET

Fairchild Semiconductor

FDMC610P Datasheet Preview — Preview of FDMC610P PDF

Datasheet Details

Part number	FDMC610P
Manufacturer	Fairchild ↗ Semiconductor
File Size	292.65 KB
Description	MOSFET
Datasheet	FDMC610P-FairchildSemiconductor.pdf

FDMC610P Product details

Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. High side switching for high end computing High power density DC-DC synchronous buck converter Pin 1 D D D D S S D D G S S S Pin

Features

Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A.
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A.
State-of-the-art switching performance.
Lower output capacitance, gate resistance, and gate charge boost efficiency.
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction.
RoHS Compliant November 2013 General.

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Published: Jan 10, 2017 |