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FDS3670 - N-Channel MOSFET

FDS3670 Description

FDS3670 January 2000 PRELIMINARY FDS3670 100V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDS3670 Features

* 6.3 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V.
* Low gate charge (57 nC typical).
* Fast switching speed
* High performance trench technology for extremely low RDS(ON) .
* High power and current handling capability. D D D D 5

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