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FDS9958 Dual P-Channel MOSFET

FDS9958 Description

FDS9958 Dual P-Channel PowerTrench® MOSFET July 2007 FDS9958 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mΩ .
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tail.

FDS9958 Features

* Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
* Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A

FDS9958 Applications

* load switching and power management, battery charging and protection circuits. Applications
* Load Switch
* Power Management D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS I

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Datasheet Details

Part number
FDS9958
Manufacturer
Fairchild Semiconductor
File Size
339.23 KB
Datasheet
FDS9958_FairchildSemiconductor.pdf
Description
Dual P-Channel MOSFET

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Dual P-Channel MOSFET Fairchild Semiconductor
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