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FQD6N50C N-Channel enhancement mode power field effect transistors

FQD6N50C Description

FQD6N50C / FQU6N50C QFET FQD6N50C / FQU6N50C 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQD6N50C Features

* 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss (typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK FQD Series I-PAK G D S FQU Series G!

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Datasheet Details

Part number
FQD6N50C
Manufacturer
Fairchild Semiconductor
File Size
687.07 KB
Datasheet
FQD6N50C_FairchildSemiconductor.pdf
Description
N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Fairchild Semiconductor
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