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Excelliance MOS

EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R.
Rating: 1 (15 votes)
Excelliance MOS

B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.
Rating: 1 (15 votes)
Silan

40N60NPFD - 600V FIELD STOP IGBT

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
Rating: 1 (11 votes)
Excelliance MOS

EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg.
Rating: 1 (9 votes)
Silan Microelectronics

60N60FD1 - 600V FIELD-STOP IGBT

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
Rating: 1 (9 votes)
SamHop Microelectronics

STD432S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D432S SamHop Microelectronics Corp. Nov,19,2007 ver1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 PRODUCT SUMMARY VDSS 40V .
Rating: 1 (8 votes)
NIKO-SEM

P1203BVA - N-Channel Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement P1203BVA Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON.
Rating: 1 (7 votes)
Vishay Telefunken

BF960 - N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
Rating: 1 (7 votes)
Xilinx

XCS20XL - Spartan and Spartan-XL Families Field Programmable Gate Arrays

0 R Spartan and Spartan-XL Families Field Programmable Gate Arrays 0 0 DS060 (v1.6) September 19, 2001 Product Specification • System level featur.
Rating: 1 (7 votes)
Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%.
Rating: 1 (7 votes)
TRinno

TGAN40N60F2DS - Field Stop Trench IGBT

Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
Rating: 1 (7 votes)
TRinno

TGAN20N135FD - Field Stop Trench IGBT

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
Rating: 1 (7 votes)
UTC

UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT

UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ.
Rating: 1 (7 votes)
Excelliance MOS

EMB07N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel .
Rating: 1 (6 votes)
NXP

J111 - N-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto.
Rating: 1 (6 votes)
Renesas

N0600N - MOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effec.
Rating: 1 (6 votes)
HI-SINCERITY

H01N60 - N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi.
Rating: 1 (6 votes)
HI-SINCERITY

H06N60E - N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel .
Rating: 1 (6 votes)
Sanken

FGF65A3L - Trench Field Stop IGBT

VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3L, MGF65A3L, FGF65A3L Data Sheet Description Package KGF65A3L, MGF6.
Rating: 1 (5 votes)
NXP

J175 - P-channel silicon field-effect transistors

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico.
Rating: 1 (5 votes)
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