effect Datasheet | Specifications & PDF Download

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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Features ─ Miniature construction ─ Low-Noise Output ─ 4.5 V to 6 V Operation ─ Magnetically Optimized Package ─ Linear output for circuit design flex

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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OCS Confidential DO NOT COPY OCH2987 350mA Single Phase Hall-Effect DC Fan Driver  General Description The OCH2987 is an integrated Hall sensor w

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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Data Sheet SINGLE PHASE HALL EFFECT LATCH General Description The AH477A is an integrated Hall sensor with Hbridged output driver designed for brushle

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W W W .ORIENT-1 2C 3HIP.COM ◼ # General Description The OCH1931 is a small, versatile linear Hall-effect device that is operated by the magnetic f

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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OB3350 Cost Effective LED Controller GENERAL DESCRIPTION OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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www.DataSheet4U.com EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DHI-092-003 HI400 ECN: REV: Page: 1.0 1/6 ■ PACKAGE DIMENSIONS: Office

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GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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-XY6112 、 XY6112，PWM 。，AC85-350V 12W 。， 。 ，AC/DC。IC ，；IC ，； ，，“” 。，。 4-12VVCC，VCC12V， ， IC ，、、， 。 IC， ， 。 DIP8ROHS。 1： 1 13 version : 1.1 200

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 9.5mΩ ID 30A

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d

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