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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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SY2305 DESCRIPTION The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trenc

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06V N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • DC

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NIKO-SEM N-Channel Logic Level Enhancement PZ2N7002Y Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS

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Cost-Effective Flash MCU with EEPROM HT68F002/HT68F0025/HT68F003 Revision: V1.41 Date: April 11, 2017 HT68F002/HT68F0025/HT68F003 Cost-Effective Flas

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MMCF4223 (SILICON) MMCF4224 Flip-Chip - N-channel junction field effect transistors designed for VHF amplifier and mixer applications. • Drain ~nd So

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A1308 and A1309 Linear Hall-Effect Sensor ICs with Analog Output Available in a Miniature, Low-Profile Surface-Mount Package FEATURES AND BENEFITS •

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Data Sheet 27621.6B* 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integra

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Data Sheet 27609.2c * 3185 THRU 3189 HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION X V CC 1 2 3 OUTPUT GROUND SUPPLY Dwg. PH-003A Pinn

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WWW.ORIENT-CHIP.COM OCH1902 Continuous-Time Ratio-metric Linear Hall Effect Sensor ◼ General Description ◼ Features The OCH1902 is small, versatil

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WWW.ORIENT-CHIP.COM OCH170 MicroPower Ultra-Sensitive Hall-effect Switch ◼ General Description The OCH170 Ultra-Sensitive Hall effect switch is fabr

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SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Datasheet Rev. 2.0, <2013-09-

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