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FQH8N100C MOSFET

FQH8N100C Description

FQH8N100C * N-Channel QFET® MOSFET FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.45 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQH8N100C Features

* 8 A, 1000 V, RDS(on) = 1.45 Ω (Max. ) @ VGS = 10 V
* Low Gate Charge (Typ. 53 nC)
* Low Crss (Typ. 16 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC =

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