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FQI9N08L 80V LOGIC N-Channel MOSFET

FQI9N08L Description

FQB9N08L / FQI9N08L June 2000 QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI9N08L Features

* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate d

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Datasheet Details

Part number
FQI9N08L
Manufacturer
Fairchild Semiconductor
File Size
612.28 KB
Datasheet
FQI9N08L_FairchildSemiconductor.pdf
Description
80V LOGIC N-Channel MOSFET

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80V LOGIC N-Channel MOSFET Fairchild Semiconductor
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