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FQI9N30 N-Channel MOSFET

FQI9N30 Description

www.DataSheet4U.com FQB9N30 / FQI9N30 May 2000 QFET FQB9N30 / FQI9N30 300V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI9N30 Features

* 9.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

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N-Channel MOSFET Fairchild Semiconductor
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