FQP27P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

- 27 A, - 60 V, RDS(on) = 70 m (Max. ) @ VGS = - 10 V, ID = - 13.5 A.
Low Gate Charge (Typ. 33 nC).
Low Crss (Typ. 120 pF).
100% Avalanche Tested.
175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Not.

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