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FQP6N40C 400V N-Channel MOSFET

FQP6N40C Description

FQP6N40C * N-Channel QFET® MOSFET FQP6N40C N-Channel QFET® MOSFET 400 V, 6.0 A, 1.0 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQP6N40C Features

* 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 3 A
* Low Gate Charge (Typ. 16 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T

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400V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP6N40C-like datasheet