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FQU20N06L N-Channel MOSFET

FQU20N06L Description

FQU20N06L * N-Channel QFET® MOSFET FQU20N06L N-Channel QFET® MOSFET 60 V, 17.2 A, 42 mΩ December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQU20N06L Features

* 17.2 A, 60 V, RDS(on) = 42 mΩ (Max. ) @ VGS = 10 V, ID = 8.6 A
* Low Gate Charge (Typ. 9.5 nC)
* Low Crss (Typ. 35 pF)
* 100% Avalanche Tested
* Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D GDS I-PAK G S Absolute Maxim

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N-Channel MOSFET Fairchild Semiconductor
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