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H11F2 PHOTO FET OPTOCOUPLERS

H11F2 Description

PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM.6 1 6 CATHODE 2 5 1 3 4 OUTPUT TERM.6 1 .
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

H11F2 Features

* As a remote variable resistor
* ≤ 100Ω to ≥ 300 MΩ
* ≥ 99.9% linearity
* ≤ 15 pF shunt capacitance
* ≥ 100 GΩ I/O isolation resistance As an analog switch
* Extremely low offset voltage
* 60 Vpk-pk signal capability
* No charge injection or lat

H11F2 Applications

* As a variable resistor
* Isolated variable attenuator
* Automatic gain control
* Active filter fine tuning/band switching As an analog switch
* Isolated sample and hold circuit
* Multiplexed, optically isolated A/D conversion © 2002 Fairchil

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Datasheet Details

Part number
H11F2
Manufacturer
Fairchild Semiconductor
File Size
403.30 KB
Datasheet
H11F2_FairchildSemiconductor.pdf
Description
PHOTO FET OPTOCOUPLERS

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