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IRF520 N-Channel Power MOSFET

IRF520 Description

Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.

IRF520 Features

* 9.2A, 100V
* rDS(ON) = 0.270Ω
* SOA is Power Dissipation Limited
* Single Pulse Avalanche Energy Rated
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

IRF520 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Info

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Datasheet Details

Part number
IRF520
Manufacturer
Fairchild Semiconductor
File Size
89.46 KB
Datasheet
IRF520_FairchildSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF520-like datasheet