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IRF614S - Power MOSFET

IRF614S Description

$GYDQFHG 3RZHU 026)(7 IRF614S .

IRF614S Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 250V
* Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Rati

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Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF614S-like datasheet