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IRFD9110 - P-Channel Power MOSFET

IRFD9110 Description

IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transis.

IRFD9110 Features

* 0.7A, 100V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110

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P-Channel Power MOSFET Fairchild Semiconductor
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