MW4IC2230GNBR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev.6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers.
10 μF, 35 V Tantalum Capacitors 8.

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Datasheet Specifications

Part number: MW4IC2230GNBR1
Manufacturer: Freescale Semiconductor
File Size: 737.73 KB
Datasheet: MW4IC2230GNBR1_FreescaleSemiconductor.pdf
Description: RF LDMOS Wideband Integrated Power Amplifiers

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* On - Chip Current Mirror gm Reference FET f

Applications

* It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CD

MW4IC2230GNBR1 Distributors

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