MW4IC2230GNBR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MW4IC2230GNBR1, RF LDMOS Wideband Integrated Power Amplifiers

10 μF, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC MW4IC2230NBR1 MW4IC2230GNBR1 4 RF Device Data Freescale Semiconductor w

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev.

6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications.

It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.

Its wideband on- chip design makes it usable from 1600 to 2400 MHz.

The linearity performances cover all modulations for cellular appli

MW4IC2230GNBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* On - Chip Current Mirror gm Reference FET f