MW4IC915GMBR1 Datasheet (Motorola) - RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

MW4IC915GMBR1, RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 22 pF Chip Capacitors, B Case, ATC #100B220JCA500X 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 10 kΩ, 1/4 W Chip Resistor (1206

www.DataSheet4U.com MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications.

It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

Its wideband On Chip design makes it usable from 750 to 1000 MHz.

The linearity performances

MW4IC915GMBR1 Features

* ut = 6 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 0 -7 -14 -21 -28 -35 -42 -49 -56 -63 -70 960 -20