MW4IC915GNBR1 Datasheet (Motorola) - RF LDMOS Wideband Integrated Power Amplifiers

MW4IC915GNBR1, RF LDMOS Wideband Integrated Power Amplifiers

22 mF, 35 V Tantalum Chip Capacitors 1000 pF Chip Capacitors 22 pF Chip Capacitors 10 pF Chip Capacitors 10 mF Tantalum Chip Capacitor 12.5 nH Inductor 0.283″, 90_ Mitered Microstrip Bends 10 kΩ, 1/4 W Chip Resistor (1206) Part Number TAJE226M035R 100B102JCA500X 100B220JCA500X 100B100JCA500X T491X22

www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC915 Rev.

5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications.

It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi stage structure.

Its wideband On Chip design makes it usable from 750 to 1000 MHz.

The linearity performances cover all modulations for cellular

MW4IC915GNBR1 Features

* C16 R4 R2 R7 P2 C1 MW4IC915MB Rev 0 C8 VGG GROUND Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on f