Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev.6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers.
10 μF, 35 V Tantalum Capacitors 8.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* On - Chip Current Mirror gm Reference FET f
Applications
* It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CD
