MW4IC2020GMBR1 RF LDMOS Wideband Integrated Power Amplifiers

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MW4IC2020/D The Wideband IC Line .
10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.

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Datasheet Specifications

Part number: MW4IC2020GMBR1
Manufacturer: Motorola
File Size: 615.64 KB
Datasheet: MW4IC2020GMBR1_Motorola.pdf
Description: RF LDMOS Wideband Integrated Power Amplifiers

Features

* _C 1 10 100 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW) 36 30 ηD, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) TC =
* 30_C 24 18 12 6 0 35 TC =
* 30_C 33 31 29 27 25 23 0.1 85_C Gps 18 15 12 ηD 9 85_C 6 VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, ID

Applications

* It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CD

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MW4IC2020GMBR1 LDMOS Wideband Integrated Power Amplifiers Motorola

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