MW4IC2020GMBR1 Datasheet (Motorola) - RF LDMOS Wideband Integrated Power Amplifiers

MW4IC2020GMBR1, RF LDMOS Wideband Integrated Power Amplifiers

10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M03

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MW4IC2020/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications.

It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.

Its wideband On - Chip design makes it usable from 1600 to 2400 MHz.

The linearity performances cove

MW4IC2020GMBR1 Features

* _C 1 10 100 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW) 36 30 ηD, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) TC =

* 30_C 24 18 12 6 0 35 TC =

* 30_C 33 31 29 27 25 23 0.1 85_C Gps 18 15 12 ηD 9 85_C 6 VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, ID