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MW4IC2230GMBR1 RF LDMOS Wideband Integrated Power Amplifiers

MW4IC2230GMBR1 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MW4IC2230/D The Wideband IC Line .
10 µF, 35 V Tantalum Capacitors 8.

MW4IC2230GMBR1 Features

* . Output Power versus Input Power 1.E+09 MTTF FACTOR (HOURS X AMPS 2 ) 3rd Stage 2nd Stage 1.E+07 1st Stage Figure 8. Delay versus Frequency 1.E+08 1.E+06 1.E+05 1.E+04 90 100 110 120 130 140 150 160 170 180 190 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF i

MW4IC2230GMBR1 Applications

* It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CD

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Datasheet Details

Part number
MW4IC2230GMBR1
Manufacturer
Motorola
File Size
693.20 KB
Datasheet
MW4IC2230GMBR1_Motorola.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers

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