Part number:
MW7IC18100GNR1
Manufacturer:
Freescale Semiconductor
File Size:
948.57 KB
Description:
Rf ldmos wideband integrated power amplifiers.
MW7IC18100GNR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MW7IC18100GNR1
Manufacturer:
Freescale Semiconductor
File Size:
948.57 KB
Description:
Rf ldmos wideband integrated power amplifiers.
MW7IC18100GNR1, RF LDMOS Wideband Integrated Power Amplifiers
6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capacitor 1.5 pF Chip Capacitor 2.2 μF, 16 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 KΩ, 1/4 W Chip Resistors Part Number ATC100B6R8BT500XT GRM55DR61H106KA88L ATC100B0R2
Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev.
1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz.
This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.
Final Application Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 10
MW7IC18100GNR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
* Integrated ESD
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