MW7IC18100GNR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MW7IC18100GNR1, RF LDMOS Wideband Integrated Power Amplifiers

6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capacitor 1.5 pF Chip Capacitor 2.2 μF, 16 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 KΩ, 1/4 W Chip Resistors Part Number ATC100B6R8BT500XT GRM55DR61H106KA88L ATC100B0R2

Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev.

1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

Final Application Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 10

MW7IC18100GNR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

* Integrated ESD