TK20P04M1 Datasheet - Freescale

TK20P04M1, MOSFETs Silicon N-Channel MOS

TK20P04M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) 1.

Features

* (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 3.7 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1:

TK20P04M1_Freescale.pdf