K2647
Fuji Electric
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K2640 - 2SK2640
(Fuji Electric)
2SK2640-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
K2642-01MR - 2SK2642-01MR
(Fuji Electric)
2SK2642-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance .. No secondary breakdown Low driving po.
K2645-01MR - 2SK2645-01MR
(Fuji Electric)
..
2SK2645-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Outline Drawings
TO-220F
FAP-2S Series
Features
High speed switch.
K2648 - 2SK2648-01
(Fuji Electric)
2SK2648-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
K2600G - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900G Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2600G - Axial Leaded Silicon Bilateral Voltage Triggered
(Sunmate)
K0900G - K2600G
Axial Leaded Silicon Bilateral Voltage Triggered
Features
· Excellent capability of absorbing transient surge · Quick response to sur.
K2600S - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900S Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2601 - 2SK2601
(Toshiba Semiconductor)
2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low d.
K2604 - 2SK2604
(Toshiba Semiconductor)
..
..
..
..
..
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K2605 - 2SK2605
(Toshiba Semiconductor)
2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm
z Low drain−source .
