MB85R256 Memory FRAM

Fuji Electric

Description

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256 s .
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and si.

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Datasheet Specifications

Part number: MB85R256
Manufacturer: Fuji Electric
File Size: 176.66 KB
Datasheet: MB85R256_FujiElectric.pdf
Description: Memory FRAM

Features

* Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range:
* 40 °C to +85 °C 28-pin,

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MB85R256 Memory FRAM Fuji Electric

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