MB85R256 Datasheet - Fuji Electric

MB85R256 Memory FRAM

The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. Th.

MB85R256 Features

* Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range:

* 40 °C to +85 °C 28-pin,

MB85R256_FujiElectric.pdf