MB85R256H Datasheet - Fujitsu Media Devices

MB85R256H Memory FRAM CMOS 256 K (32 K X 8) Bit

The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery..

MB85R256H Features

* Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range:

* 40 °C to +85 °C 28-pin,

MB85R256H_FujitsuMediaDevices.pdf