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MB85R256H

Memory FRAM CMOS 256 K (32 K X 8) Bit

MB85R256H Features

* Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range:

* 40 °C to +85 °C 28-pin,

MB85R256H General Description

The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery..

MB85R256H Datasheet (304.13 KB)

Preview of MB85R256H PDF

Datasheet Details

Part number:

MB85R256H

Manufacturer:

Fujitsu Media Devices

File Size:

304.13 KB

Description:

Memory fram cmos 256 k (32 k x 8) bit.

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MB85R256H Memory FRAM CMOS 256 Bit Fujitsu Media Devices

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