Datasheet4U Logo Datasheet4U.com

MB85R1001

1 M Bit (128 K X 8)

MB85R1001 Features

* Bit configuration : 131,072 words x 8bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C 48-pin, TSOP (1) plastic package

* PACKAGE 48-pin plastic TSOP(1) (FPT-48

MB85R1001 General Description

The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery.

MB85R1001 Datasheet (163.00 KB)

Preview of MB85R1001 PDF

Datasheet Details

Part number:

MB85R1001

Manufacturer:

Fujitsu Media Devices

File Size:

163.00 KB

Description:

1 m bit (128 k x 8).

📁 Related Datasheet

MB85R1001A 1 M Bit (128 K x 8) (Fujitsu)

MB85R1002 Memory FRAM (Fujitsu Media Devices)

MB85R1002A 1 M Bit (64 K x 16) (Fujitsu)

MB85R2001 Memory FRAM CMOS (Fujitsu)

MB85R2002 Memory FRAM CMOS (Fujitsu)

MB85R256 Memory FRAM (Fuji Electric)

MB85R256F Memory FRAM (Fujitsu)

MB85R256H Memory FRAM CMOS 256 K (32 K X 8) Bit (Fujitsu Media Devices)

MB85R4001A Memory FRAM (Fujitsu)

MB85R4002A Memory FRAM (Fujitsu)

TAGS

MB85R1001 Bit 128 Fujitsu Media Devices

Image Gallery

MB85R1001 Datasheet Preview Page 2 MB85R1001 Datasheet Preview Page 3

MB85R1001 Distributor