MB85R1001 Datasheet - Fujitsu Media Devices

MB85R1001 1 M Bit (128 K X 8)

The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery.

MB85R1001 Features

* Bit configuration : 131,072 words x 8bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C 48-pin, TSOP (1) plastic package

* PACKAGE 48-pin plastic TSOP(1) (FPT-48

MB85R1001_FujitsuMediaDevices.pdf