MB85R4001A Datasheet - Fujitsu

MB85R4001A Memory FRAM

The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4001A is able to retain data without using a back-up battery, as is needed.

MB85R4001A Features

* Bit configuration : 524,288 words × 8 bits

* Read/write endurance : 1010 times / byte

* Data retention : 10 years ( + 55 °C), 55 years ( + 35 °C)

* Operating power supply voltage : 3.0 V to 3.6 V

* Low power operation : Operating power supply curre

MB85R4001A-Fujitsu.pdf