MB85R4M2T Datasheet - Fujitsu

MB85R4M2T Memory FRAM

The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up battery, as is needed .

MB85R4M2T Features

* PIN ASSIGNMENTS (TOP VIEW) A4 A3 A2 A1 A0 / CE I/ O0 I/ O1 I/ O2 I/ O3 VDD VSS I/ O4 I/ O5 I/ O6 I/ O7 / WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37

MB85R4M2T_Fujitsu.pdf