MB85R1001A Datasheet - Fujitsu

MB85R1001A 1 M Bit (128 K x 8)

The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed fo.

MB85R1001A Features

* Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 131,072 words × 8 bits : 1010 times : 3.0 V to 3.6 V :

* 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plas

MB85R1001A_Fujitsu.pdf