MB85R256F Datasheet (Fujitsu)

MB85R256F, Memory FRAM

The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery,

MB85R256F Features

* Bit configuration : 32,768 words × 8 bits

* High endurance 10 Billion Read/writes

* Peripheral circuit CMOS construction

* Operating power supply voltage : 2.7 V to 3.6 V

* Operating temperature range :

* 40 °C to +85 °C

* Data re