MB85R256F - Memory FRAM

Product Overview

Fujitsu

Datasheet Details

Part number	MB85R256F
Manufacturer	Fujitsu
File Size	325.07 KB
Description	Memory FRAM
Datasheet	MB85R256F Datasheet
Additional preview pages of the MB85R256F datasheet.

Product details

Description

The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Features

Bit configuration : 32,768 words × 8 bits.
High endurance 10 Billion Read/writes.
Peripheral circuit CMOS construction.
Operating power supply voltage : 2.7 V to 3.6 V.
Operating temperature range :.
40 °C to +85 °C.
Data re.

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Published: Nov 14, 2016 |