MB85R256F Datasheet - Fujitsu

MB85R256F Memory FRAM

The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, .

MB85R256F Features

* Bit configuration : 32,768 words × 8 bits

* High endurance 10 Billion Read/writes

* Peripheral circuit CMOS construction

* Operating power supply voltage : 2.7 V to 3.6 V

* Operating temperature range :

* 40 °C to +85 °C

* Data re

MB85R256F-Fujitsu.pdf

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Datasheet Details

Part number:

MB85R256F

Manufacturer:

Fujitsu

File Size:

325.07 KB

Description:

Memory fram.

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MB85R256F MB85R256F Memory FRAM Fujitsu

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