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MB85R2001

Memory FRAM CMOS

MB85R2001 Features

* Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :

* 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin

MB85R2001 General Description

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2001 is able to retain data without using a back-up battery, as is needed for.

MB85R2001 Datasheet (149.85 KB)

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Datasheet Details

Part number:

MB85R2001

Manufacturer:

Fujitsu

File Size:

149.85 KB

Description:

Memory fram cmos.

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MB85R2001 Memory FRAM CMOS Fujitsu

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