MB85R2001 - Memory FRAM CMOS

Product Overview

Fujitsu

Datasheet Details

Part number	MB85R2001
Manufacturer	Fujitsu
File Size	149.85 KB
Description	Memory FRAM CMOS
Datasheet	MB85R2001 Datasheet
Additional preview pages of the MB85R2001 datasheet.

Product details

Description

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Features

Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :.
40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2009.

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Published: Nov 19, 2013 |