MB85R2001 Datasheet - Fujitsu

MB85R2001 Memory FRAM CMOS

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2001 is able to retain data without using a back-up battery, as is needed for.

MB85R2001 Features

* Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention Package : 262,144 words × 8 bits : 1010 times/bit : 3.0 V to 3.6 V :

* 40 °C to + 85 °C : 10 years ( + 55 °C) : 48-pin

MB85R2001_Fujitsu.pdf