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MB85R1002

Memory FRAM

MB85R1002 Features

* Bit configuration : 65,536 words x 16 bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C LB and UB data byte control 48-pin, TSOP(1) plastic package

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MB85R1002 General Description

The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1002 is able to retain data without back-up battery.

MB85R1002 Datasheet (175.97 KB)

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Datasheet Details

Part number:

MB85R1002

Manufacturer:

Fujitsu Media Devices

File Size:

175.97 KB

Description:

Memory fram.

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MB85R1002 Memory FRAM Fujitsu Media Devices

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