MB85R1002 Datasheet - Fujitsu Media Devices

MB85R1002 Memory FRAM

The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1002 is able to retain data without back-up battery.

MB85R1002 Features

* Bit configuration : 65,536 words x 16 bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C LB and UB data byte control 48-pin, TSOP(1) plastic package

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MB85R1002_FujitsuMediaDevices.pdf