P08N50E FMP08N50E

Fuji Electric

P08N50E Description

FMP08N50E Super FAP-E3 series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Rep.

P08N50E Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

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Datasheet Details

Part number: P08N50E
Manufacturer: Fuji Electric
File Size: 462.73 KB
Datasheet: P08N50E-FujiElectric.pdf
Description: FMP08N50E

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FMP08N50E Fuji Electric

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