FMH06N90E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMH06N90E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±6 ±24 ±30 6 323.6 11.5 2.0 100 2.5 115 150 -55 to + 150 Unit V V A A V.

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI.

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Datasheet Details

Part number: FMH06N90E
Manufacturer: Fuji Electric
File Size: 563.67 KB
Datasheet: FMH06N90E_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET Fuji Electric

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