FMH11N90E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMH11N90E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±11 ±44 ±30 11 811.9 28.5 2.2 100 2.5 285 150 -55 to + 150 Unit V V A A.

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI.

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Datasheet Details

Part number: FMH11N90E
Manufacturer: Fuji Electric
File Size: 582.95 KB
Datasheet: FMH11N90E_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET Fuji Electric

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