FMH17N60ES - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMH17N60ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±17 ±68 ±30 17 765.5 28.5 4.2 100 2.50 285 150 -55 to + 150 Unit V V A.

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI.

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Datasheet Details

Part number: FMH17N60ES
Manufacturer: Fuji Electric
File Size: 634.38 KB
Datasheet: FMH17N60ES_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET Fuji Electric

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