Part number:
MJD112
Manufacturer:
GME
File Size:
202.87 KB
Description:
Epitaxial planar npn transistor.
* High DC Current Gain.
* Built-in a Damper Diode at E-C. Pb Lead-free
* Lead Formed for Surface Mount Applications.
* Straight Lead.
* MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Sym
MJD112
GME
202.87 KB
Epitaxial planar npn transistor.
📁 Related Datasheet
MJD112 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MJD112 Silicon NPN epitaxial planer Transistors (MCC)
MJD112 Silicon NPN Power Transistor (Inchange Semiconductor)
MJD112 NPN Silicon Darlington Transistor (Fairchild Semiconductor)
MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)
MJD112 NPN Transistor (JCET)
MJD112 Complementary Darlington Power Transistor (ON Semiconductor)
MJD112 NPN Transistor (MCC)
MJD112 Complementary power Darlington transistor (STMicroelectronics)
MJD112 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)