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MJD112 Epitaxial Planar NPN Transistor

MJD112 Description

Epitaxial Planar NPN Transistor .

MJD112 Features

* High DC Current Gain.
* Built-in a Damper Diode at E-C. Pb Lead-free

MJD112 Applications

* Straight Lead.
* MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltag

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Datasheet Details

Part number
MJD112
Manufacturer
GME
File Size
202.87 KB
Datasheet
MJD112-GME.pdf
Description
Epitaxial Planar NPN Transistor

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Epitaxial Planar NPN Transistor GME
GME MJD112-like datasheet