MJD112 Epitaxial Planar NPN Transistor

GME

Description

Epitaxial Planar NPN Transistor .

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Datasheet Specifications

Part number: MJD112
Manufacturer: GME
File Size: 202.87 KB
Datasheet: MJD112-GME.pdf
Description: Epitaxial Planar NPN Transistor

Features

* High DC Current Gain.
* Built-in a Damper Diode at E-C. Pb Lead-free

Applications

* Straight Lead.
* MSL 3. Production specification MJD112 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltag

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MJD112 Epitaxial Planar NPN Transistor GME

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