Description
Main Product Characteristics V(BR)DSS 500V GSFH5020 500V N-Channel MOSFET D RDS(ON) 0.19Ω ID 20A S GD .
The GSFH5020 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* TO-220
* Advanced MOSFET process technology
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Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
±30
Continuous Drain Current @ Steady-State1, TC=25°C
20
ID
Continuous Drain Current @ Steady-State, TC=100°C
13
Pulsed Drain Current2
IDM
80