Description
Main Product Characteristics V(BR)DSS 500V GSFU20N50 500V N-Channel MOSFET D RDS(ON) 0.26Ω (Max.) ID 20A .
The GSFU20N50 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, @ Steady-State (TC=25°C)1 Continuous Drain Current, @ Steady-State (TC=100°C) Pulsed Drain Current2 Power Dissipation (TA=25°C) Linear Derat