Description
Main Product Characteristics V(BR)DSS 60V RDS(ON) 28mΩ (Max.) S ID 64A D G .
The GSFU250N06 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* TO-220F
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
60
Gate-to-Source Voltage
VGS
±20
Continuous Drain Current, @ Steady-State (TC=25°C)1
ID
64
Continuous Drain Current, @ Steady-State (TC=100°C)
45
Pulsed Drain Current2
IDM