Description
Main Product Characteristics V(BR)DSS 20V RDS(ON) ID 380mΩ (max.) 0.75A GSFW0200 20V N-Channel MOSFET D SOT-883 G S Schematic Diagram .
The GSFW0200 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
20
Gate-Source Voltage Drain Current-Continuous1
VGS
±12
ID
0.75
Pulsed Drain Current
IDM
Power Dissipation1
PD
Thermal Resistance from Junction to Ambient1
RθJA
1.8 0.15