Description
Main Product Characteristics V(BR)DSS 60V RDS(ON) ID 3.0Ω (max.) 0.34A GSFW0600 60V N-Channel MOSFET D SOT-883 G S Schematic Diagram .
The GSFW0600 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
60
Gate-Source Voltage Drain Current-Continuous1
VGS
±20
ID
0.34
Pulsed Drain Current (VGS=10V, tp=10us)1
IDM
800
Power Dissipation
PD
0.35
Thermal Resistance from Juncti