Description
Main Product Characteristics BVDSS -20V RDS(ON) ID 640mΩ (max.) -0.66A .
The GSFW02066 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Drain-Source Voltage
VDS
-20
Gate-Source Voltage Drain Current-Continuous1
VGS
±8
ID
-0.66
Pulsed Drain Current
IDM
Power Dissipation1
PD
Thermal Resistance from Junction to Ambient1
RθJA
-2.1 0.