Description
Main Product Characteristics GSFW3139K 20V P-Channel MOSFET BVDSS RDS(ON) ID -20V 410mΩ (Max.) -0.7A .
The GSFW3139K utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* ESD Protection
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±12
Continuous Drain Current, Steady State @ TA=25°C
-0.7
ID
Continuous Drain Current, Steady State @ TA=70°C
-0.6
Pulsed Drain Current1
IDM
-2.
