Description
Main Product Characteristics BVDSS 20V RDS(ON) 280mΩ ID 1.4A .
The GSFW0202A utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TJ=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
20
Gate-Source Voltage Drain Current-Continuous (TA=25°C) 1,3 Drain Current-Continuous (TA=70°C) 1,3
VGS
±12
0.7
ID 0.9
Drain Current-Pulsed 2
IDM
1.9
Diode Continuous Forward