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GT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA Descri.
The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number
GT6301K
Manufacturer
GTM
File Size
275.96 KB
Datasheet
GT6301K_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Small Package Outline
* RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Total Power Dissipation Linear De

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