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GT6924E N-CHANNEL MOSFET

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Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/25 REVISED DATE : GT6924E N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) ID 2.
Lower on-resistance. Fast Switching Characteristic. Included Schottky Diode Features Package Dimensions REF.

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Datasheet Specifications

Part number
GT6924E
Manufacturer
GTM
File Size
301.01 KB
Datasheet
GT6924E_GTM.pdf
Description
N-CHANNEL MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage (MOSFET) Gate-Source Voltage

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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