Datasheet4U.com

GD30MPS12H - Silicon Carbide Schottky Diode

GeneSiC

📥 Download Datasheet

GD30MPS12H Datasheet Preview — Preview of GD30MPS12H PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GD30MPS12H
Manufacturer	GeneSiC
File Size	541.61 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD30MPS12H-GeneSiC.pdf

GD30MPS12H Product details

Features

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC.
VF.
100% Avalanche (UIL) Tested.
Enhanced Surge Current Withstand Capability.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package TO-247-2 TM VRRM = IF (TC = 148°C) = QC = 1200 V 30 A 97 nC Case RoHS K A REACH Advantages.
Improved System Efficiency.

📁 GD30MPS12H Similar Datasheet

GD30MLX65F1SF_B22 - IGBT (STARPOWER)
GD300FFA120C6S - IGBT (STARPOWER)
GD300FFX65P3S - IGBT (STARPOWER)
GD300HFF120C2S - IGBT (STARPOWER)
GD300HFK120C2S - IGBT (STARPOWER)
GD300HFL170C2S - IGBT (STARPOWER)
GD300HFL170C6S - IGBT (STARPOWER)
GD300HFQ120C2S - IGBT (STARPOWER)

Other Datasheets by GeneSiC

GD30MPS12J - Silicon Carbide Schottky Diode
GD30MPS06A - Silicon Carbide Schottky Diode
GD30MPS06H - Silicon Carbide Schottky Diode
GD30MPS06J - Silicon Carbide Schottky Diode

Published: Dec 20, 2024 |